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High Performance Serial Persistent SRAM Memory

ASxxxx204 is a magneto-resistive random-access memory (MRAM). It is offered in density ranging from 1Mbit to 16Mbit. MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile.

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Semiconductors

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High Performance Serial Persistent SRAM Memory

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MRAM is a true random-access memory; allowing both reads and writes to occur randomly in memory. MRAM is ideal for applications that must store and retrieve data without incurring large latency penalties. It offers low latency, low power, virtually infinite endurance and retention, and scalable non-volatile memory technology. ASxxxx204 has a Serial Peripheral Interface (SPI). SPI is a synchronous interface which uses separate lines for data and clock to help keep the host and slave in perfect synchronization. The clock tells the receiver exactly when to sample the bits on the data line. This can be either the rising (low to high) or falling (high to low) or both edges of the clock signal; please consult the instruction sequences in this datasheet for more details. When the receiver detects that correct edge, it can latch in the data. ASxxxx204 is available in small footprint 8-pad WSON, 8-pin SOIC and 24-Ball FBGA packages. These packages are compatible with similar low-power volatile and non-volatile products. ASxxxx204 is offered with industrial (-40°C to 85°C) and industrial plus (-40°C to 105°C) operating temperature ranges

High Performance Serial Persistent SRAM Memory

(AS1001204, AS1004204, AS1008204, AS1016204, AS3001204, AS3004204, AS3008204, AS3016204)

Features

• Interface

▪ Serial Peripheral Interface QSPI (4-4-4)

▪ Single Data Rate Mode: 108MHz

▪ Double Data Rate Mode: 54MHz

• Technology ▪ 40nm pMTJ STT-MRAM

▪ Virtually unlimited Endurance and Data Retention (see Endurance and Data Retention specification on page 48)

• Density

▪ 1Mb, 4Mb, 8Mb, 16Mb

• Operating Voltage Range ▪ VCC: 1.71V – 2.00V