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NOR Flash 64 Mbit x16 Advanced Multi-Pur Flash plu
The SST38VF6401B, SST38VF6402B, SST38VF6403B, and SST38VF6404B devices are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with Microchip proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401B/6402B/6403B/6404B write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories.
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NOR Flash 64 Mbit x16 Advanced Multi-Pur Flash plu
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The SST38VF6401B, SST38VF6402B, SST38VF6403B, and SST38VF6404B devices are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with Microchip proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401B/6402B/6403B/6404B write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories.
Featuring high performance Word-Program, the SST38VF6401B/6402B/6403B/6404B provide a typical Word-Program time of 7 μsec. For faster word-programming performance, the Write-Buffer Programming feature, has a typical word-program time of 1.75 μsec. These devices use Toggle Bit, Data# Polling, or the RY/ BY# pin to indicate Program operation completion. In addition to single-word Read, Advanced MPF+ devices provide a Page-Read feature that enables a faster word read time of 25 ns, eight words on the same page. To protect against inadvertent write, the SST38VF6401B/6402B/6403B/6404B have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are available with 100,000 cycles minimum endurance. Data retention is rated at greater than 100 years.
The SST38VF6401B/6402B/6403B/6404B are suited for applications that require the convenient and economical updating of program, configuration, or data memory. For all system applications, Advanced MPF+ significantly improve performance and reliability, while lowering power consumption. These devices inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. For any given voltage range, the SuperFlash technology uses less current to program and has SST38VF6401B / SST38VF6402B SST38VF6403B / SST38VF6404B 64 Mbit (x16) Advanced Multi-Purpose Flash Plus SST38VF6401B / SST38VF6402B / SST38VF6403B / SST38VF6404B DS20005002D-page 2 Preliminary 2013 Microchip Technology Inc. a shorter erase time; therefore, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore, the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. The SST38VF6401B/6402B/6403B/6404B also offer flexible data protection features. Applications that require memory protection from program and erase operations can use the Boot Block, Individual Block Protection, and Advanced Protection features. For applications that require a permanent solution, the Irreversible Block Locking feature provides permanent protection for memory blocks.
To meet high-density, surface mount requirements, the SST38VF6401B/6402B/6403B/6404B devices are offered in 48-lead TSOP and 48-ball TFBGA packages. See Figures 2-1 and for pin assignments and Table 2- 1 for pin descriptions.
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